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Piezoresistive 4HSilicon Carbide SiC Pressure Sensor
>> YOUR LINK HERE: ___ http://youtube.com/watch?v=QUJfQrPNSL4
Sponsored by IEEE Sensors Council (https://ieee-sensors.org/) • Title: Piezoresistive 4H-Silicon Carbide (SiC) Pressure Sensor • Author: Piotr Mackowiak{1}, Kolja Erbacher{1}, Manuel Baeuscher{1}, Michael Schiffer{1}, Klaus-Dieter Lang{2}, Martin Schneider-Ramelow{2}, Ha-Duong Ngo{3} • Affiliation: {1}Fraunhofer Institute for Reliability and Microintegration, Germany; {2}Technische Universität Berlin, Germany; {3}University of Applied Sciences Berlin, Germany • Abstract: A novel 4H SiC piezoresistive pressure sensor has been fabricated using a high temperature metallization system. The sensor has been fabricated using 100 mm 4H-double Epi SiC Wafers. While the top has been etched to form the piezoresistors, the lower Epi-layer is oppositely doped acts as an isolation layer. The formation of the membrane has been performed by a newly developed reactive ion etching (RIE) process enabling etch rates of up to 4 µm/min through bulk SiC. The gold-based metallization system is able to withstand high temperatures. • IEEE Sensors Conferences (https://ieee-sensors.org/conferences/) • IEEE Sensors Journal (https://ieee-sensors.org/sensors-jour...) • IEEE Sensors Letters (https://ieee-sensors.org/sensors-lett...) • IEEE Internet of Things Journal (https://ieee-iotj.org/)
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