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>> YOUR LINK HERE: ___ http://youtube.com/watch?v=hKGJoW_u6wo
In this Physics (Digital Electronics) video lecture in Hindi for class 12 we explained forward and reverse bias in p-n junction diode in terms of depletion layer and potential barrier. When positive terminal of a cell is connected to p side of the pn junction, it is called farward baising and when positive terminal of a cell is connected to n side of the pn junction, it is called reverse baising. Current flows in forward bias and not otherwise. During forward bias depletion layer becomes very thin and potential barrier reduces, hence current is allowed to flow. But during reverse bias depletion layer becomes very thick and potential barrier increases, hence current stops. • OTHER RELATED VIDEOS : • SEMICONDUCTOR | Valence Band, Conduction Band, Forbidden Energy Gap • • 🔴 SEMICONDUCTOR | Valence Band, Condu... • SEMICONDUCTOR TYPE | Intrinsic Extrinsic p-Type n-Type • • 🔴 SEMICONDUCTOR TYPE | Intrinsic Extr... • Rectifier - Half wave and Full wave • • 🔴 Rectifier - Half wave and Full wave... • Voltage-Current characteristics of p-n Junction Diode • • 🔴 Voltage-Current characteristics of ... • LIGHT EMITTING DIODE or LED • • 🔴 LIGHT EMITTING DIODE or LED - Worki... • TRANSISTOR - Part 1 • • 🔴 TRANSISTOR - Part 1 | Construction ... • Full Wave BRIDGE Rectifier • • 🔴 Full Wave BRIDGE Rectifier | in HINDI • LOGIC GATES • • 🔴 LOGIC GATES | video lecture in HINDI • **************************************** • Click to visit the homepage of our channel : / @edupoint.physics • EduPoint, • Dam Road, • Chandil, • Dist- Seraikela-Kharsawan, • Jharkhand, • India.
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